Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films

Baldassarre, L. et al. (2016) Mid-Infrared Plasmonic Platform Based on n- Doped Ge-on-Si: Molecular Sensing with Germanium Nano-Antennas on Si. In: 41st International Conference on Infrared, Millimeter, and Terahertz Waves

CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nanoantennas on Si substrates demonstrating the presence ...

Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films

Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the 10 to 10 cm range, by infrared spectroscopy, first principle cal...

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) ...

Tunability of the Dielectric Function of Heavily Doped Germanium Thin Films for Mid-infrared Plasmonics

Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates.

Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of molecules. While gold has been used almost exclusively so far, recent research has focused on semiconductors with the potential to revolutionize plasmonic devices. We fabricate antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrate up to 2 orders of magnitude signal enh...